publication date : may., 2011 1 < high-power gan hemt (small signal gain stage) > MGF0846G l to c band / 40w non - matched description the MGF0846G, gan hemt with an n-channel schottky gate, is designed for mmds/umts/wimax applications. features ? high voltage operation vds=47v ? high output power po=46.5dbm(typ.) @f=2.6ghz,p3db ? high efficiency ? d=60%(typ.) @f=2.6ghz,p3db ? designed for use in class ab linear amplifiers application ? mmds/umts/wimax quality ? gg packaging ? 4 inch tray (25 pcs) recommended bias conditions ? vds=47v ? ids=340ma ? rg=30 ? absolute maximum ratings (ta=25 ? c) symbol parameter ratings unit v ds drain to source voltage 120 v v gs gate to source voltage -10 v i gr reverse gate current -6 ma i gf forward gate current 120 ma p t*1 total power dissipation 64 w tch cannel temperature 230 ? c tstg storage temperature -65 to +175 ? c *1:tc=25 ? c electrical characteristics (ta=25 ? c) symbol parameter test conditions limits unit min. typ. max. vgs(off) gate to source cut-off voltage vds=47v,id=12ma -1 - -5 v p3db 3db gain compression power 45.5 46.5 - dbm ? d drain efficiency - 60 - % glp *2 linear power gain vds=47v,id(rf off)=340ma f=2.6ghz *2 : pin=20dbm 12 13 - db rth(ch-c) *3 thermal resistance vf method - 2.5 3.2 ? c/w *3 :channel-case specification are subject to change without notice. note dc aging is recommended to perform before operating in order to stabilize a characteristics of gan-hemt. (ta R 80 ? c) ? bias conditions vds=47v , ids=340ma ? time 10hrs (1) gate (2) source (flange) (3) drain 0 . 6 5 gf-7 1 . 6 5 0 . 1 14.0 9.00.2 5.0 1 . 9 0 . 4 out li ne drawi ng 2.2 0.60.2 unit : millimeters 2 m i n 4 . 4 + 0 / - 0 . 3 2 m i n preliminary
< high-power gan hemt (small signal gain stage) > MGF0846G l to c band / 40w non - matched publication date : may., 2011 2 preliminar y MGF0846G example of circuit schemati c and charactreistics : f = 2.6 ghz 0.0 0.5 1.0 1.5 10 15 20 25 30 35 40 pin(dbm) idrf(a) 0 5 10 15 20 25 30 35 40 45 50 po(dbm),gp(db) 0 10 20 30 40 50 60 70 80 90 100 efficiency(%) f=2.6ghz vd=47v idq=350ma ta=25deg. po effi gp
< high-power gan hemt (small signal gain stage) > MGF0846G l to c band / 40w non - matched publication date : may., 2011 3 preliminar y MGF0846G s-parameters ( ta=25deg.c , vds=47(v),ids=350(ma) ) s parameters(typ.) s11 s21 s12 s22 f (ghz) magn. angle(deg.) magn. angle(deg.) m agn. angle(deg.) magn. angle(deg.) 0.6 0.966 -173.6 5.549 85.5 0.029 30.5 0.660 -173.7 1.0 0.910 -176.4 3.379 74.4 0.028 3.6 0.643 -179.5 1.4 0.893 176.6 2.433 66.6 0.027 9.1 0.632 178.5 1.8 0.903 174.0 1.992 59.5 0.029 6.7 0.632 178.4 2.2 0.897 168.3 1.675 52.0 0.033 -1.2 0.648 175.2 2.6 0.909 163.9 1.402 42.0 0.026 4.1 0.664 173.0 3.0 0.875 157.0 1.293 34.7 0.031 -1.7 0.628 168.0 3.4 0.905 151.1 1.206 25.6 0.034 11.6 0.635 162.8 3.8 0.894 144.3 1.051 15.3 0.048 1.3 0.644 158.0 4.2 0.907 140.7 0.945 7.4 0.036 -19.0 0.666 152.3 4.6 0.911 136.7 0.853 1.2 0.038 -22.2 0.682 147.7 5.0 0.908 134.5 0.793 -4.8 0.035 -5.2 0.702 144.5 5.4 0.901 130.9 0.728 -10.9 0.039 -3.8 0.715 142.1 5.8 0.894 126.8 0.695 -18.1 0.041 -9.1 0.740 139.3 6.2 0.891 119.4 0.658 -25.5 0.046 -12.4 0.742 137.2 6.6 0.887 110.9 0.630 -33.8 0.049 -14.7 0.751 133.2 7.0 0.894 99.5 0.600 -43.6 0.049 -22.0 0.735 127.9 7.4 0.899 91.5 0.570 -51.5 0.056 -25.4 0.731 120.9 7.8 0.902 83.8 0.530 -60.5 0.052 -32.9 0.733 113.1 8.2 0.906 78.8 0.500 -68.5 0.058 -36.3 0.756 103.9
< high-power gan hemt (small signal gain stage) > MGF0846G l to c band / 40w non - matched publication date : may., 2011 4 preliminar y ? 2011 mitsubishi electric corporation. all rights reserved. keep safety first in your circuit designs! mitsubishi electric corporation puts the maximum effo rt into making semiconductor products better and more reliable, but there is alwa ys the possibility that trouble may occur with them. trouble with semiconductors may lead to personal injury, fire or property damage. remember to give due consideration to safety when making your circuit designs, with appr opriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. notes regarding these materials ?these materials are intended as a reference to assist our customers in the selection of the mitsubishi semiconductor product best suited to the customer?s application; they do not convey any license under any intellectual property rights, or any ot her rights, belonging to mitsubishi elec tric corporation or a third party. ?mitsubishi electric corporation assumes no res ponsibility for any damage, or infringement of any third-party?s rights, originating in the use of any pr oduct data, diagrams, charts, programs, algorithms, or circuit application examples c ontained in these materials. ?all information contained in thes e materials, including product data, diagrams, charts, programs and algorithms represents information on pr oducts at the time of publication of these materials, and are subject to change by mitsubishi electric cor poration without notice due to product improvements or other reasons. it is therefore recommended that cust omers contact mitsubishi electric corporation or an authorized mitsubishi semiconductor product distri butor for the latest product info rmation before pu rchasing a product listed herein. the information described here may contain technica l inaccuracies or typographical errors. mitsubishi electric corporation assumes no re sponsibility for any damage, liability, or other loss rising from these inaccuracies or errors. please also pay attention to info rmation published by mitsubishi electr ic corporation by various means, including the mitsubishi semiconductor home page (http://www. m itsubishi e lectric.com/). ?when using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, pleas e be sure to evaluate all informati on as a total system before making a final decision on the applic ability of the information and products. mi tsubishi electric corporation assumes no responsibility for any damage, liabilit y or other loss resulting from the information contained herein. ?mitsubishi electric corporation semiconductors are not designed or m anufactured for use in a device or system that is used under circum stances in which human life is pot entially at stake. please contact mitsubishi electric corporation or an authorized mitsubishi semiconductor product distributor when considering the use of a pr oduct contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aeros pace, nuclear, or undersea repeater use. ?the prior written approval of mitsubishi electric corporat ion is necessary to reprint or reproduce in whole or in part these materials. ?if these products or technologies ar e subject to the japanese export cont rol restrictions, they must be exported under a license from the ja panese government and cannot be im ported into a country other than the approved destination. any diversion or re-export contrary to the export contro l laws and regulations of japan and/or the country of destination is prohibited. ?please contact mitsubishi electric corporation or an authorized mitsubi shi semiconductor product distributor for further details on these material s or the products contained therein.
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